Seagate Nytro 5000 Endurance Optimised Secure SED 800GB 2.5″ PCIe NVMe XP800HE10012
The Seagate® Nytro® 5000 NVMe solid state drive (SSD) represents the next generation of enterprise SSDs. Engineered for low power, high performance, and increased storage density in data centres, Nytro 5000 SSD eliminates performance bottlenecks and significantly improves quality of service (QoS).
Overcome Data Bottlenecks and Improve QoS
Nytro 5000 SSD is highly optimised for read-intensive and mixed workloads. Incorporating the PCIe® Gen3 ×4 interface with the NVMe protocol, Nytro 5000 SSD features four times the bandwidth of SATA SSDs, removing data bottlenecks by delivering blistering throughput and IOPS.
Nytro 5000 SSD also features sideband management for monitoring the health of the SSDs without introducing latency or disrupting overall throughput.
Increase Storage Density and Efficiency in Data Centres
The low-power Nytro 5000 SSD is offered in both 2.5-inch and M.2 form factors, enabling more computing using minimal space, energy, and cost. The Nytro 5000 SSD is also extremely scalable and space-optimised to reduce TCO. In addition, the Nytro 5000 SSD with the U.2 connector enables effortless serviceability and maintenance with no downtime requirements, and features hot-swap capability for easy addition, removal, or replacement of SSDs.
Enhance Enterprise Reliability, Data Protection, and Security
By leveraging Seagate’s existing enterprise expertise and manufacturing excellence, Nytro 5000 SSD delivers the highest levels of data integrity, data security, and endurance for critical business applications.
Nytro 5000 SSD includes features for end-to-end data protection, LDPC error correction, and Seagate RAISE technology for solid reliability and endurance. Power-loss data protection helps maintain data integrity in the event of unexpected power interruptions. Seagate Secure™ SelfEncrypting Drive (SED) models support the TCG protocol to help companies keep valuable data secure.
|Seagate Secure™ SED Model||XP800HE10012|
|Interface||PCIe Gen3 x4 (NVMe)|
|NAND Flash Type||3D cMLC|
|Form Factor||2.5 in × 7 mm|
|Sequential Read (MB/s) Sustained, 128 KB||2,000|
|Sequential Write (MB/s) Sustained, 128 KB||1,200|
|Random Read (IOPS) Sustained, 4 KB QD64||2,45,000|
|Random Write (IOPS) Sustained, 4 KB QD64||60,000|
|Random 70R/30W (IOPS) Sustained, 4KB QD64||1,30,000|
|Lifetime Endurance (Drive Writes per Day)||1.5|
|Total Bytes Written (TB)||2,150|
|Non-recoverable Read Errors per Bits Read||1 per 10E16|
|Mean Time Between Failures (MTBF, hours)||20,00,000|
|Limited Warranty (years)||5|
|+12 V Max Power (W)||12.5|
|+3.3 V Max Power (W)||—|
|Average Read/Write Power (W)||9|
|Height (mm/in, max)||7 mm/0.275 in|
|Height, Component Top (mm/in, max)||—|
|Height, Component Bottom (mm/in, max)||—|
|Width (mm/in)||69.85 mm/2.75 in|
|Depth (mm/in)||100.35 mm/3.951 in|
|Weight (lb/g)||90 g/0.198 lb|
|Carton Unit Quantity||10|
|Cartons per Pallet / Cartons per Layer||40/5|